Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - FETs, MOSFETs - Single |
Datenblatt: | TPH2010FNH,L1Q |
Beschreibung: | MOSFET N-CH 250V 5.6A 8SOP |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - FETs, MOSFETs - Single |
Serie | U-MOSVIII-H |
FET-Typ | N-Channel |
Verpackung | Cut Tape (CT) |
Vgs (Max.) | ±20V |
Technologie | MOSFET (Metal Oxide) |
FET-Funktion | - |
Teilstatus | Discontinued at Digi-Key |
Montagetyp | Surface Mount |
Paket / Fall | 8-PowerVDFN |
Vgs(th) (Max) @ Id | 4V @ 200µA |
Betriebstemperatur | 150°C (TJ) |
Rds On (Max) bei Id, Vgs | 198mOhm @ 2.8A, 10V |
Verlustleistung (Max.) | 1.6W (Ta), 42W (Tc) |
Lieferanten-Gerätepaket | 8-SOP Advance (5x5) |
Gate Charge (Qg) (Max.) | 7nC @ 10V |
Drain to Source Voltage (Vdss) | 250V |
Eingangskapazität (Ciss) (Max. | 600pF @ 100V |
Strom - Kontinuierlicher Abfluss (Id) bei 25 °C | 5.6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |