Hersteller: | Toshiba Semiconductor and Storage |
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Produktkategorie: | Transistors - FETs, MOSFETs - Single |
Datenblatt: | TK6A65D(STA4,Q,M) |
Beschreibung: | MOSFET N-CH 650V 5A TO-220SIS |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | Toshiba Semiconductor and Storage |
Produktkategorie | Transistors - FETs, MOSFETs - Single |
Serie | π-MOSVII |
FET-Typ | N-Channel |
Verpackung | Tube |
Vgs (Max.) | ±30V |
Technologie | MOSFET (Metal Oxide) |
FET-Funktion | - |
Teilstatus | Active |
Montagetyp | Through Hole |
Paket / Fall | TO-220-3 Full Pack |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Betriebstemperatur | 150°C (TJ) |
Rds On (Max) bei Id, Vgs | 1.11Ohm @ 3A, 10V |
Verlustleistung (Max.) | 45W (Tc) |
Lieferanten-Gerätepaket | TO-220SIS |
Gate Charge (Qg) (Max.) | 20nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Eingangskapazität (Ciss) (Max. | 1050pF @ 25V |
Strom - Kontinuierlicher Abfluss (Id) bei 25 °C | 6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$1.57 | $1.54 | $1.51 |