| Hersteller: | STMicroelectronics |
|---|---|
| Produktkategorie: | Transistors - IGBTs - Single |
| Datenblatt: | STGD4M65DF2 |
| Beschreibung: | TRENCH GATE FIELD-STOP IGBT, M S |
| RoHS-Status: | RoHS-konform |
| Attribut | Attributwert |
|---|---|
| Hersteller | STMicroelectronics |
| Produktkategorie | Transistors - IGBTs - Single |
| Serie | M |
| IGBT-Typ | Trench Field Stop |
| Verpackung | Digi-Reel® |
| Eingabetyp | Standard |
| Gate Charge | 15.2nC |
| Teilstatus | Active |
| Leistung - Max | 68W |
| Montagetyp | Surface Mount |
| Paket / Fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Testbedingung | 400V, 4A, 47Ohm, 15V |
| Basis-Teilenummer | STGD4 |
| Schalten der Energie | 40µJ (on), 136µJ (off) |
| TD (ein/aus) bei 25°C | 12ns/86ns |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Lieferanten-Gerätepaket | DPAK |
| Vce(on) (Max) - Vge, Ic | 2.1V @ 15V, 4A |
| Reverse Recovery Time (trr) | 133ns |
| Strom - Kollektor (Ic) (Max) | 8A |
| Strom - Collector Pulsed (Icm) | 16A |
| Spannung - Kollektor Emitter Aufschlüsselung (Max) | 650V |
| Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |