Hersteller: | ROHM Semiconductor |
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Produktkategorie: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Datenblatt: | EMF5T2R |
Beschreibung: | TRANS NPN PREBIAS/PNP 0.15W EMT6 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
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Hersteller | ROHM Semiconductor |
Produktkategorie | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Serie | - |
Verpackung | Cut Tape (CT) |
Teilstatus | Active |
Leistung - Max | 150mW |
Montagetyp | Surface Mount |
Paket / Fall | SOT-563, SOT-666 |
Transistortyp | 1 NPN Pre-Biased, 1 PNP |
Basis-Teilenummer | *MF5 |
Widerstand - Basis (R1) | 47kOhms |
Frequenz - Übergang | 250MHz, 260MHz |
Lieferanten-Gerätepaket | EMT6 |
Widerstand - Emitter-Basis (R2) | 47kOhms |
Vce Sättigung (Max.) | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Strom - Kollektor (Ic) (Max) | 100mA, 500mA |
Strom - Collector Cutoff (Max) | 500nA |
Gleichstromverstärkung (hFE) (Min) | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Spannung - Kollektor Emitter Aufschlüsselung (Max) | 50V, 12V |
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.49 | $0.48 | $0.47 |