Hersteller: | Infineon Technologies |
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Produktkategorie: | Transistors - FETs, MOSFETs - Single |
Datenblatt: | IPA65R400CEXKSA1 |
Beschreibung: | MOSFET N-CH 650V TO220-3 |
RoHS-Status: | RoHS-konform |
Attribut | Attributwert |
---|---|
Hersteller | Infineon Technologies |
Produktkategorie | Transistors - FETs, MOSFETs - Single |
Serie | CoolMOS™ |
FET-Typ | N-Channel |
Verpackung | Tube |
Vgs (Max.) | ±20V |
Technologie | MOSFET (Metal Oxide) |
FET-Funktion | Super Junction |
Teilstatus | Active |
Montagetyp | Through Hole |
Paket / Fall | TO-220-3 Full Pack |
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Rds On (Max) bei Id, Vgs | 400mOhm @ 3.2A, 10V |
Verlustleistung (Max.) | 31W (Tc) |
Lieferanten-Gerätepaket | PG-TO220 Full Pack |
Gate Charge (Qg) (Max.) | 39nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Eingangskapazität (Ciss) (Max. | 710pF @ 100V |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Refrence Preis ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.78 | $0.76 | $0.75 |